Complementary Fet

AOD606 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

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Diodes' 8V to 29V Complementary MOSFETs are designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Diodes' 8V to 29V Complementary MOSFETs are designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. AO4614, datasheet for AO4614 - Complementary Enhancement Mode Field Effect Transistor provided by Alpha & Omega Semiconductors. AO4614 pdf documentation and AO4614 application notes, selection guide.

Наименование прибора: AOD606

Тип транзистора: MOSFET

Полярность: NP

Максимальная рассеиваемая мощность (Pd): 20 W

Предельно допустимое напряжение сток-исток |Uds|: 40 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 8 A

Максимальная температура канала (Tj): 175 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm

Тип корпуса: TO252-4L

AOD606 Datasheet (PDF)

0.1. aod606.pdf Size:239K _aosemi

AOD606Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD606 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 40V -40Vexcellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

9.1. aod607a.pdf Size:563K _aosemi

AOD607A30V Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. aod607.pdf Size:209K _aosemi

AOD607Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD607 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 30V -30Vexcellent RDS(ON) and low gate charge. ID = 12A (VGS=10V) -12A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

9.3. aod609.pdf Size:269K _aosemi

AOD609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD609 uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V)charge. The complementary MOSFETs may be usedRDS(ON)

9.4. aod603a.pdf Size:392K _aosemi

AOD603A60V Complementary MOSFETGeneral Description Product Summary N-Channel P-ChannelThe AOD603A uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gateVDS= 60V -60Vcharge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V)used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

Другие MOSFET... AOD460, AOD466, AOD472, AOD472A, AOD488, AOD490, AOD512, AOD518, STF5N52U, AOTF11S65L, AOTF15S60L, AOTF15S65L, AOTF18N65L, AOTF20S60L, AOTF298L, AOTF7S60, AOTF7S60L.

Complementary Feta

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